IRFU0IRFPG4IRFPF40, IRFP9240, IRFP9140, IRFP240. The FieldEffectTransistor (FET) is a field effect transistor.
etc. can be driven. According to the relevant public information query, MOS stands for MOSFET. MOSFET metal-oxide-semiconductor field-effect transistor (MOSFET), referred to as metal-oxide-semiconductor field-effecttransistor (MOSFET).
mos tube models are as follows: Enhanced mos tube: The gate-source voltage of the enhanced MOSFETs with dual gate structure or depletion layer structure is about 8v. Schottky barrier diode: The forward drain current density can reach more than 100a/dtl. This device works in reverseIt can withstand large inrush current impact when it reaches the breakdown zone.
Asus likes to use NXP MOS tubes from the P55. I used to like NIKOsemi. Msi has been using Renesas' DrMOS and sometimes ONsemi on high-end motherboards since the P45. Gigabyte started with NECEL's MOS from the P35, which was replaced by ONsemi when NECEL was acquired. Low-end boards are also NIKOsemi's domain.
MOS tube with MCU VDSS=20V or 30V can be UT230UT230UT3400, UT340NCE3010 and so on can be driven by a single chip computer, which can be selected according to the power you use. If the VDSS is generally not driven at 60V or the same, the MOS of VDSS below 30V can generally be driven.
1, voltage specifications: including VDSS, VDS, BVDSS and V (BR) DSS, the latter focusing onCircuit applications. Current parameters: ID, IDM, focus on pulse current capability. Temperature limit: such as TJ, TSTG, to ensure device performance and life. Energy-related: such as PD and EAS, reflect the overload capability of the device.
2, these high-power imports are more, Taiwan also has several brands. This one has 20A, 29A, 30A, 33A, 34A, 38A, 45A, 600V47A MOS tubes, 50A, 55A, 60A. Hyphile technology packages these MOS.
3, VGS (maximum gate source voltage) :Limit the gate voltage to prevent device overload, which can lead to breakdown. Tj (maximum working junction temperature) : High temperature may affect the performance, and room should be left for design. TSTG (Storage Temperature Range) : Ensures the long-term stability of the device under different environmental conditions.
4, MOSFET module referred to as MOS module, generally using SOT-227 package, Hai Fei Le technology package silicon carbide MOS tube, SIC MOS module, including low-voltage high-current MOSFET module for vehicles. Power MOS modules have the following advantages: fast switching speed, wide safety working area, and thermal stabilityA T-tube. In addition, the appropriate voltage and current capacity should be selected to meet the needs of practical applications.
3, many motor drivers are integrated charge pump, it should be noted that the appropriate external capacitor should be selected to get enough short circuit current to drive the MOS tube. The 4V or 10V mentioned above is the on-voltage of the commonly used MOS tube, and of course, there is a certain margin when designing. And the higher the voltage, the faster the switching speed, the smaller the switching resistance.
4, one is to pay attention to the maximum driving capacity of the MOS tube, that is, the maximum current value. MOS tube withstand voltage value, anotherOne is the package, mainly to consider the heat dissipation problem.