MOSFET has the advantages of small on-resistance, low loss, simple drive circuit, good thermal resistance characteristics, etc., especially suitable for PC, mobile phone, mobile power supply, vehicle navigation, electric vehicles, UPS power supply and other power control fields.
The MOSFET market is mainly occupied by Infineon, according to IHS statistics pointed out that Infineon accounted for up to 27% of the market, ranking second for ON, with 13% of the market, and the third is Renesas with 9%. In the high-value high-voltage MOSFET field, Infineon is significantly ahead of all competitors with 36% of the market share, and ST and Toshiba are second and third with 19% and 11% of the market.
IGBT is a compound semiconductor power device composed of a dual carrier junction transistor (BJT) and a MOSFET. It has the advantages of high input impedance of MOSFET and low on-resistance of BJT. IGBT drive power is small, very suitable for use in DC voltage 600V and above the converter system, such as AC motor, inverter, switching power supply, lighting circuit, traction drive, etc. As for the IGBT market, it is led by Infineon, Mitsubishi and Fujifilm, while On is mainly in the low-voltage consumer electronics industry, with voltages below 600V. In the field above 1700V, it is used in high-speed rail, automotive electronics, smart grid, etc., which is basically monopolized by Infineon, ABB and Mitsubishi.
MOSFET voltage resistance is not as strong as IGBT. The advantage of MOSFET is that it can be applied to the high-frequency field, and the MOSFET operating frequency can be applied to RF products from several hundred KHZ to dozens of MHZ. The IGBT reaches 100KHZ, which is almost the best working limit. Finally, if the electronic components need to perform high-speed switching action, MOSFET has an absolute advantage, mainly because the IGBT has integrated BJT, and BJT itself has a charge storage time problem, that is, it takes a long time when OFF, resulting in high speed switching action.
In terms of structure, taking N-type channel as an example, the difference between IGBT and MOSFET (VDMOS) is that the substrate of MOSFET is N-type, and the substrate of IGBT is P-type; In principle, IGBT is equivalent to a combination of mosfet and BIpolar, which reduces the on-resistance of the device through hole injection of the P-type layer on the back, but also introduces some problems such as trailing current. In terms of products, IGBT is generally used in high-voltage power products, from 600V to several thousand volts; MOSFET application voltage is relatively low from ten volts to about 1000;