Wide-bandgap gallium nitride high-frequency\/high-speed RF chips can greatly improve radar detection accuracy and communication speed. The state has included gallium nitride in the \"14th Five-Year Plan\" development plan and has risen to a national strategy.
With the support of various national projects, after more than ten years of continuous research, gallium nitride high-frequency\/high-speed RF chips have been independently controllable, reversing the passive situation of high-end RF chips in China.
Technical innovations: 1. New gallium nitride high-frequency power amplifier chip technology. 2. New gallium nitride high power frequency multiplier chip technology. 3. New gallium nitride high-speed modulator chip technology. 4. High frequency RF front-end module integration miniaturization technology.
This technology project has achieved a number of international leading indicators and is highly praised by international peers. Established the first international gallium nitride standard, with fully independent intellectual property rights. The results were applied to the front radar and communication system of the UAV of the Aerospace Group, and the detection resolution and distance were improved by leaps and bounds, and applied to the high-definition video transmission of the venues of the 2022 Beijing Winter Olympics.
In addition, it is widely used in major equipment and systems such as terahertz security inspection and instruments, with a cumulative supply of more than 130,000 pieces and an output value of more than 100 million yuan, which supports the upgrading of major equipment and systems in China.