Radar RF chips are typically made of compound semiconductor materials such as gallium arsenide (GaAs) or gallium nitride (GaN). GaAs has high electron mobility and low noise characteristics, making it suitable for low-power applications. With higher power density and wider bandwidth, GaN is suitable for high power and high frequency applications. In addition, materials such as silicon germanium (SiGe) and zinc oxide (ZnO) are also used to manufacture radar RF chips, offering different performance and cost trade-offs.