The process principle of electric injection is that it is necessary to use electric injection equipment for electric injection treatment of the battery. Electric injection is to continuously pass a certain current into the battery under the right temperature conditions, so as to achieve the passivation effect, which can significantly improve the efficiency and anti-light decay ability of the battery.
It is necessary to control the temperature of the battery during the electric injection process to keep the temperature of the battery in an appropriate range.
At present, multiple batteries are generally stacked together for electrical injection, and the stacked batteries have a certain height, and the batteries at different height positions will have temperature differences.
When the light is irradiated, the free electrons generated by the N-type region are more likely to absorb the energy of the photon, the electrons that absorb the energy will move freely, and the freely moving electrons are more likely to be adsorbed by the holes in the P-type region, so that a unidirectional flow of electrons is generated on a macro level, that is, an electric current is generated.
Therefore, in the case of light irradiation, the N-type area will be positively charged, the P-type area will be negatively charged, and the potential difference will be formed on both sides, that is, the voltage, when the two ends are connected to the load, the photovoltaic cell will generate current like an ordinary battery to drive the load.
The principle of electric injection and the principle of ion implantation technology, ion implantation technology in modern semiconductor technology has been a relatively mature process.
In the preparation of ultra-high-speed, microwave, and medium - and large-scale integrated circuits, the junction depth of the device and the width of the base area are as small as only a few tenths of a micron, and the impurity concentration distribution also has higher requirements (some even require the impurity concentration to be very light), which is difficult to achieve by ordinary diffusion processes.
The ion implantation process can make up for the shortcomings of the diffusion process and produce the ideal PN junction