Semiconductor passivation layers are usually formed by gaseous reactions such as oxidation, nitriding or silication.
The oxidation passivation layer is usually formed by the oxidation reaction of oxygen or nitrogen with the semiconductor surface, which can improve the stability and corrosion resistance of the semiconductor.
The nitriding and silicified passivation layers are formed by the reaction of nitrogen or silicon gas with the semiconductor surface, which can improve the interface characteristics and electron transport performance of the semiconductor.
These passivation layers can effectively protect semiconductor materials, extend device life and improve performance stability.