There are some differences in the working principle of the drive of the field effect tube and the IGBT tube. The drive of the FET requires a forward voltage to be applied to the gate to open the tube, and a continuous voltage is required to keep the tube on. The IGBT tube drive requires a positive voltage to open the gate electrode, and a negative voltage to close the tube. In addition, the drive of the IGBT tube requires a more complex circuit to achieve control and protection functions, because the IGBT tube is a compound tube composed of a junction FET and a bipolar transistor, compared with the field effect tube drive is more simple and direct.