1, Single crystal furnace
Monocrystalline furnace is a kind of equipment that melts polycrystalline materials such as polysilicon with graphite heater in inert gas (nitrogen and helium) environment, and grows non-misplacement monocrystalline silicon with cinetrophe method. In the actual production of monocrystalline silicon, it plays a key role in controlling the temperature and quality of silicon crystals.
Since the diameter of single crystal can be affected by temperature, lifting speed and rotational speed, crucible tracking speed, protective gas flow rate and other factors during the growth process, the production temperature mainly determines whether crystallization can be achieved, and the speed will directly affect the internal quality of the crystal, and this influence can only be known after the single crystal is pulled out by detection. The main control aspects of single crystal furnace include crystal diameter, silicon power control, leakage rate and argon gas quality.
2, Gas phase epitaxial furnace
The gas phase epitaxy furnace mainly provides a specific process environment for the gas phase epitaxy growth of silicon, and realizes the growth of thin layer crystals on a single crystal with a corresponding relationship with the single crystal phase. Epitaxial growth refers to the growth of a layer on the single crystal substrate (substrate) with certain requirements, the same as the substrate crystal to the same single crystal layer, as the original crystal extends a section, in order to manufacture high-frequency high-power devices, it is necessary to reduce the series resistance of the collector, but also requires the material to withstand high voltage and high current, so it is necessary to grow a thin high-resistance epitaxial layer on the low resistance substrate.
Gas phase epitaxy furnace can prepare for the functional realization of single crystal bottom. Gas phase epitaxy is a special process of chemical vapor deposition. The crystal structure of the thin layer is a continuation of the single crystal substrate and maintains a corresponding relationship with the crystal orientation of the substrate.
3, Oxidizing furnace
Silicon reacts with gases containing oxides, such as water vapor and oxygen, at high temperatures to produce a dense silica film on the surface of the silicon wafer, which is an important process in silicon plane technology. The main function of the oxidation furnace is to oxidize semiconductor materials such as silicon, provide the required oxidation atmosphere, and achieve the oxidation treatment process of the semiconductor design, which is an indispensable part of the semiconductor processing process.
4, Magnetron sputtering platform
Magnetron sputtering is a kind of physical vapor deposition, and the general sputtering method can be used to prepare semiconductor materials, and has the advantages of simple equipment, easy control, large coating area and strong adhesion. In the silicon wafer production process, through a closed magnetic field parallel to the target surface in the bipolar sputtering and the orthogonal electromagnetic field formed on the target surface, the secondary electrons are bound to the specific area of the target surface, to achieve high ion density and high energy ionization, and the target atoms or molecules are deposited on the substrate at a high rate of sputtering to form a film.
5, Chemical mechanical polishing machine
A chemical mechanical grinding machine, in silicon wafer manufacturing, with the upgrading of process technology, wire and gate size reduction, lithography technology on the flat degree of wafer surface requirements are getting higher and higher, IBM in 1985 to develop CMOS products introduced, and in 1990 successfully applied to 64MB DRAM production, after 1995, CMP technology has been rapidly developed and widely used in the semiconductor industry.
Chemical mechanical grinding, also known as chemical mechanical polishing, is a processing technology that combines chemical corrosion and mechanical removal, and is the only technology that can achieve global surface flatness in mechanical processing. In actual manufacturing, its main role is to grind and polish the ground body (semiconductor) through the combined effect of mechanical grinding and chemical liquid dissolution \"corrosion\".
6, Photoetching machine
Also known as mask alignment exposure machine, exposure system, lithography system, etc., the commonly used lithography machine is mask alignment lithography, and the general lithography process needs to go through the silicon surface cleaning and drying, coating primer, spinning resist, soft drying, alignment exposure, post-drying, development, hard drying, etching and other processes. The process by which a device or circuit structure is temporarily \"copied\" onto a silicon wafer by homogenizing the surface of the wafer and then transferring the pattern on the mask to the photoresist.
7, Ion implanter
It is one of the high-voltage small accelerators and has the largest number of applications. It is the ion source to obtain the required ions, after the acceleration of several hundred thousand electron volts energy of the ion beam, used for semiconductor materials, large-scale integrated circuits and devices ion injection, but also used for metal materials surface modification and film making.
In the silicon production process, it is necessary to use ion implanter to dope the area near the semiconductor surface. Ion implanter is a key equipment in the pre-manufacturing process of integrated circuit. Ion implantation is a technology to dope the area near the semiconductor surface to change the carrier concentration and conduction type of the semiconductor. Compared with the conventional thermal doping process, ion implantation can accurately control the injection dose Angle and depth, overcome the limitations of the conventional process, and reduce the cost and power consumption.
8, Lead bonding machine
Its main function is to link the Pad on the semiconductor chip with the Pad on the pin with a conductive metal wire (gold wire). Lead bonding is a kind of thin metal wire, the use of heat, pressure, ultrasonic energy to make the metal lead and the substrate pad tight welding, to achieve the electrical interconnection between the chip and the substrate and the information exchange between the chip. Under ideal control conditions, electron sharing or atom diffusion will occur between the lead and the substrate, so that the bonding between the two metals can be achieved on the atomic scale.
9, Wafer scribing machine
Because when the silicon wafer is manufactured, it is often a whole large wafer, which needs to be sliced and processed, the value of the wafer scribing machine is reflected at this time. The reason why wafers need to change size is to make more complex integrated circuits.
10, Wafer thinning machine
In silicon wafer manufacturing, the dimensional accuracy, geometric accuracy, surface cleanliness and surface microlattice structure of the wafer are very high requirements, so in hundreds of processes, thin wafers can not be used, and only a certain thickness of wafers can be used in the process of transfer and flow. Wafer thinning is the reduction of the size of the wafer body in the production of integrated circuits in order to make more complex integrated circuits. Before the integrated circuit packaging, it is necessary to remove a certain thickness of the excess substrate material on the back of the chip, and the equipment required for this process is the chip thinning machine.
Of course, in the actual production process, silicon wafer manufacturing requires far more equipment than these. The reason why the attention of lithography machine exceeds other semiconductor equipment is that its technical difficulty is the highest, and only a few countries such as the Netherlands and the United States have core technology. In recent years, domestic enterprises continue to make breakthroughs in lithography machine technology has also achieved good results, not long ago, the first domestic super resolution lithography machine was developed, a time excited the people, with the continuous progress of China's independent research and development of technology, the future of China's own production of wafers will continue to come out.