The 8205A is the highest performing channel-n-CHMOSFET with an extremely high cell density, providing excellent RDSON and gate charges for most low power switching and load switching applications. Meet RoHS and product requirements, reliable function.
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8205A Properties 8205A Parameter Values
8205A Field effect Tube (MOSFET)
Type 8205A double N channel (common leakage)
Drain-source voltage (Vdss) :20V
Continuous drain current (Id) -
Power (Pd) :2W
On-resistance (RDS(on)@Vgs,Id) :22mΩ, 4.5V,4.5A
Threshold voltage (Vgs(th)@Id) :1.5V@250uA
Grid charge (Qg@Vgs): 6.24nC@4.5V
Input capacitance (Ciss@Vds) :522.3pF@8V
Reverse transmission capacitance (Crss@Vds) :74.69pF@8V
Operating temperature (min): -55℃@(Tj)
Operating temperature (Max): 150℃@(Tj)
The full name of 8205A is UT8205A, which is an N-channel enhanced power MOSFET tube. The maximum current is also 6A, the voltage is 20V, and the on-resistance is 28 milliohms. RDS(ON) 28mR.