There are two main methods for measuring irregular film resistance:
The first method is the wafer level four-probe method, which can provide more accurate resistance measurement, but the operation is complicated, and needs the aid of probe station, semiconductor parameter meter and other equipment.
The other is the Vanderbilt measurement method, which usually uses a large Greek cross structure to measure resistance in practical applications, and in order to offset the voltmeter imbalance, it is necessary to apply positive and negative current to multiple measurements at multiple locations and perform data analysis.