1. Processor positioning
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As we all know, the current Snapdragon processor is divided into entry, mid-end, mid-end and high-end four positioning, Snapdragon 7 series chip belongs to the high-end SOC, the representative products are Snapdragon 778, Snapdragon 780 and last year's more common Snapdragon 765, Snapdragon 750 and the upgraded Snapdragon 768G.
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The Snapdragon 8 series chip is the flagship standard, the current common Snapdragon 888 PLUS, Snapdragon 888 and the flagship chip Snapdragon 870 and the common Snapdragon 865 last year. Therefore, Snapdragon 778G and Snapdragon 888 positioning is the difference between high-end and high-end. The Snapdragon 778G is the product that sits between the Qualcomm Snapdragon 6 series and 8 series.
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2. Performance parameter difference
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The gap between Snapdragon 778G and Snapdragon 888 is mainly different from the process, architecture, GPU, baseband and support hardware standards, etc. Snapdragon 778G uses TSMC 6nm process, CPU uses 4xA78 4xA55 architecture, and GPU is. Adreno 642L with X53 5G baseband.
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The Snapdragon 888 is even more powerful, using a 5nm process and integrating a new 2.84GHz Cortex-X1 super-core, three 2.4GHz A78 midcore and four 1.8GHz A55 energy efficiency cores. And integrated Adreno 660 GPU, its graphics rendering capability compared to the previous generation Snapdragon 865 increased by up to 35%. Powered by Snapdragon x60 5G baseband.
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3. Difference in running points
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In the comparison of the performance of Android mobile phones, although the running score is not the only standard to measure the quality of the machine, it has a certain reference value for the performance of the machine, and the mobile phone with built-in Snapdragon 778G is the HONOR 50 series, and there are more built-in Snapdragon 888 machines.
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Choose two at will, in the Antutu running score software can be seen, the HONOR 50 Pro (8 256) running score is 51W points, while the Mi 11 running score is 78W points, the one plus 9 running score is 81W points, the gap between the two sides is clear.
The former uses TSMC's six-nanometer manufacturing process, and its running score reached more than 500,000 points, while the latter uses Samsung's five-nanometer manufacturing process, and its running score reached more than 800,000 points, which is obviously the latter's performance has been improved a lot more than the former, but the former's power consumption has decreased a lot more than the latter, and it is more stable.
Testing materials room TSMC's six-nanometer processing technology, he is an upgraded version of Qualcomm Snapdragon 778g, however, the frequency of the upgrade is not high, and then the Samsung five-nanometer processing technology is Qualcomm Snapdragon flagship level processor, the former Hangzhou are running less than 60,000 points, the latter difficult Tuhao reached nearly 800,000, so the latter is much better than the former trust, However, the power consumption control of the former is better
First of all, the Snapdragon 778g plus processor scored an unprecedented 400,000 points. And its overall poor workmanship is TSMC foundry 6mm process is also considered to be a quasi-flagship processor.
Red 778g plus, the Snapdragon 888 processor is also manufactured by TSMC 6mm process, but its overall score is reached a 460,000 points, compared to G8g is more than one grade higher, but this processor from the release so far, a power consumption is too high, emergency mobile phone fever, caton and even forced shutdown phenomenon, It has been controversial among netizens