Although the 2-nanometer chip does not have a flow sheet, it is technically different from the 7-nanometer chip.
The surface difference between a 2-nanometer chip and a 7-nanometer chip is the number of transistors per unit area, but in fact there is no difference in technology. The more advanced GAA architecture will replace the existing FinFET architecture.
At present, the manufacturers that can produce 3nm in the world are Samsung and TSMC. Compared with the 3nm FinFET architecture used by TSMC, Samsung's 3nm chip in terms of technical performance, the transistors of GAA architecture can provide better electrostatic characteristics than FinFET, and can meet the needs of certain gate widths.
After the chip process reaches the 5 nm node, with the shortening of the gate length, the short-channel effect becomes more and more obvious, the FinFET structure has been difficult to meet the current drive and electrostatic control capabilities required by the transistor, and more current leaks through the non-contact part at the bottom of the device, and the leakage phenomenon deteriorates sharply. Based on this GAA architecture, the four sides between the gate and the channel are realized, and it is widely considered to be the successor of FinFET. The fact that TSMC did not adopt the technology is a measure taken to ensure the energy production of 3nm chips, and the technology is expected to enter TSMC's plans for 2nm processes.
The difference is that the 2-nanometer process can lead to higher transistor density, stronger performance and lower power consumption compared to the 7-nanometer process.