Kirin 999 good, personally think it is better than Kirin,
The Qualcomm 888 is too hot. We speculate that it should be the first generation of 10LPE process, FinFET's unique shark fin structure can control the leakage rate, providing support for the chip process exploration. The 10nm process node has obvious advantages in energy efficiency and chip area, and compared with the 14nm LPE FinFET of Kirin 999, the performance is improved by 24% and the power consumption is reduced by 30%.