The highest precision chip the world can make is 3 nanometers.
At present, the global energy production chip is 5 nm, but Samsung and TSMC's 3 nm chip has been streaming, is expected to be able to enter mass production after the completion of plant construction next year. Samsung 3nm uses GAA architecture to achieve all sides between gate pairs of channels and is widely considered to be the successor to FinFET. While TSMC's 3-nanometer naturally adopts a 5-nanometer fin-type field-effect transistor (FinFET) architecture, TSMC's 2nm has changed to a new multi-bridge channel field-effect transistor (MBCFET) architecture, which is ahead of the development schedule.