Model Hynix ddr4 8G 2666
Type 260-Pin DDR4 SDRAM
In terms of performance, the third-generation 4D NAND technology can improve the unit read speed and data transfer rate, in addition, the 176-layer NAND flash chip uses a 2-partition unit array selection technology.
The principle is that the storage unit is divided into two parts, with lower call resistance and faster read speed. With acceleration technology that does not increase the number of processes (ensuring a quick response to data call requests), the third generation 4D NAND can also increase transfer rates by 33%.