Up to 10 nanometers.
The current maximum process for flash memory chips is 10 nanometers. According to the analysis of market agency Damo, Changxin storage's 17nm DRAM chip yield has reached 40%, and it is expected to provide customers with the latest memory chip products in the second quarter of this year. However, compared with the memory chip giants of foreign heads, Changxin Storage's 17nm memory chip yield still needs to be improved and the technology is constantly iterated. In addition, Micron, SK Hynix and Samsung, the three flash memory manufacturers with the highest market share, have come to the 10 nanometer node in the research and development of DRAM chips.